Semiconductor package and method of manufacturing the same

ABSTRACT

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

CROSS-REFERENCE TO RELAYED APPLICATION

This is a continuation application of and claims the priority benefit ofU.S. application Ser. No. 16/172,842, filed on Oct. 28, 2018, nowallowed. The entirety of each of the above-mentioned patent applicationsis hereby incorporated by reference herein and made a part of thisspecification.

BACKGROUND

The semiconductor industry has experienced rapid growth due tocontinuous improvements in the integration density of a variety ofelectronic components (e.g., transistors, diodes, resistors, capacitors,etc.). For the most part, this improvement in integration density hascome from repeated reductions in minimum feature size, which allows morecomponents to be integrated into a given area. As the demand forminiaturization, higher speed and greater bandwidth, as well as lowerpower consumption and latency has grown recently, there has grown a needfor smaller and more creative packaging techniques of semiconductordies.

As semiconductor device sizes have decreased, the density of devices hasincreased. Along with such increases in processing power, however, hasalso come an increase in the amount of heat generated by the packagedevices. As is to be expected, excessive amounts of heat present in thepackage devices can and typically does decrease device performance. Aprolonged exposure to excessive temperatures may decrease thereliability and operating lifetime of the devices.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 to FIG. 8 illustrate schematic cross sectional views of variousstages in a manufacturing process of a semiconductor package inaccordance with some embodiments.

FIG. 9 illustrates a schematic top view of a heat dissipation componentin accordance with some embodiments.

FIG. 10 illustrates a schematic cross sectional view of a stage in amanufacturing process of a semiconductor package in accordance with someembodiments.

FIG. 11 illustrates a schematic cross sectional view of a semiconductorpackage in accordance with some embodiments.

FIG. 12 to FIG. 16 illustrate schematic cross sectional views of variousstages in a manufacturing process of a semiconductor package inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1 to FIG. 8 illustrate schematic cross sectional views of variousstages in a manufacturing process of a semiconductor package inaccordance with some embodiments. In exemplary embodiments, themanufacturing process of the semiconductor package disclosed herein maybe part of a wafer level packaging process. In some embodiments, onesemiconductor device is shown to represent plural semiconductor devicesof the wafer, and one single package is shown to represent pluralsemiconductor packages obtained the following semiconductormanufacturing process. The manufacturing process of the semiconductorpackage 100 shown in FIG. 8 may include the following steps.

Referring to FIG. 1, in some embodiments, a carrier 20 is provided. Thecarrier 20 may be a glass carrier, a ceramic carrier or any suitablecarrier for the manufacturing process of the semiconductor package 100.The carrier 20 may have a round top-view shape and may have a size of asilicon wafer. In some embodiments, the carrier 20 may be coated with ade-bonding layer (e.g. the de-bonding layer 21 shown in FIG. 12). Thematerial of the de-bonding layer may be a polymer-based material or anymaterial suitable for de-bonding the carrier 20 from the abovecomponents disposed thereon. For example, the de-bonding layer may be aultra-violet (UV) curable adhesive, a heat curable adhesive, an opticalclear adhesive or a light-to-heat conversion (LTHC) adhesive, or thelike, although other types of de-bonding layer may be used. In addition,the de-bonding layer may be also adapted to allow light or signal topass through. It is noted that the materials of the de-bonding layer andthe carrier 20 are merely for illustration, and the disclosure is notlimited thereto.

Then, a heat dissipation component 110 is provided on a carrier 20. Insome embodiments, the heat dissipation component 110 includes a concaveportion 112 and an extending portion 114. In some embodiments, theconcave portion 112 is disposed on the carrier 20, so that a bottomsurface of the concave portion 112 leans against the carrier 20, and theextending portion 114 is connected to the concave portion 112 andextended away from the carrier 20 as shown in FIG. 1. The concaveportion 112 is configured for receiving at least one semiconductordevice (e.g. the semiconductor devices 120 a, 120 b shown in FIG. 2 andFIG. 3). In the present embodiment, the heat dissipation component 110may be in a form of, for example, a stamped metal heat sink, but thedisclosure is not limited thereto. In other words, the heat dissipationcomponent 110 may be formed by stamping sheet metal to form at least oneconcave portion 112 on the heat dissipation component 110. In someembodiments, the material of the heat dissipation component 110 mayinclude metal with high thermal conductivity such as copper, aluminum,or aluminum oxide (Al₂O₃). For example, the thermal conductivity ofcopper is about 400 W·m⁻¹·K⁻¹ to about 410 W·m⁻¹·K⁻¹, the thermalconductivity of aluminum is about 230 W·m⁻¹·K⁻¹ to about 240 W·m⁻¹·K⁻¹,and the thermal conductivity of aluminum oxide is about 30 W·m⁻¹·K⁻¹ toabout 40 W·m⁻¹·K⁻¹. It is noted that the heat dissipation component 110made of aluminum oxide can provide higher rigidity and mechanicalstrength with favorable thermal conductivity.

With reference now to FIG. 2 and FIG. 3, at least one semiconductordevice is disposed in the concave portion 112 of the heat dissipationcomponent 110. In some embodiments, a plurality of semiconductor devices120 a, 120 b are illustrated herein, but the disclosure is not intendedto limit the number of the semiconductor device disposed in the concaveportion 112. In one of the implementations, the semiconductor device tobe disposed in the concave portion 112 includes a first semiconductordevice 120 a as shown in FIG. 3 and at least one second semiconductordevice 120 b (two second semiconductor devices 120 b are illustratedherein) as shown in FIG. 2. Accordingly, the second semiconductordevices 120 are firstly disposed in the concave portion 112. In someembodiments, the second semiconductor devices 120 are arranged in theconcave portion 112 in a side-by-side manner. In some embodiments, eachof the second semiconductor devices 120 b may include an active surfaceS1 facing away from the carrier 20 (i.e. facing up) and a plurality ofconductive pillars 122 b disposed on the active surface S1 andelectrically connected to the electrical contacts of the secondsemiconductor devices 120 b. In some embodiments, the active surface S1is the surface where the electrical contacts are formed. That is to say,each of the second semiconductor devices 120 b is disposed on the heatdissipation component 110 with its back surface S2, which is opposite tothe active surface S1. In some embodiments, the back surface S2 may bean inactive surface without electrical contacts formed thereon.

Then, the first semiconductor device 120 a is stacked on the secondsemiconductor devices 120 b. In some embodiments, the firstsemiconductor device 120 a may include an active surface S1 facing awayfrom the carrier 20 and a plurality of conductive bumps 122 a disposedon the active surface of the first semiconductor device 120 a. Theconductive bumps 122 a are electrically connected to the pads of firstsemiconductor device 120 a. In some exemplary embodiments, the number ofthe semiconductor devices 120 a, 120 b may be device dies that aredesigned for mobile applications, and may include a Power ManagementIntegrated Circuit (PMIC) die and a Transceiver (TRX) die, for example.Although one first semiconductor device 120 a is illustrated, moresemiconductor devices may be placed on the heat dissipation component110. In some embodiments, the top surfaces of the conductive pillars 122b, the top surfaces of the conductive bumps 122 a, and the top surfaceof the extending portion 114 may be substantially level (i.e. coplanar)with one another.

In some embodiments, the heat dissipation component 110 is in heattransfer relationship with the semiconductor devices 120 a, 120 bdisposed thereon, and may be in contact (connect) with the semiconductordevices 120 a, 120 b through an interface material 124. In someembodiments, the interface material 124 may be omitted. In someembodiments, the interface material 124 is disposed between the concaveportion 112 and the back surfaces S1 of the second semiconductor devices120 b, so that the second semiconductor devices 120 b are bonded to theconcave portion 112 of the heat dissipation component 110. The interfacematerial 124 may also be disposed between the second semiconductordevices 120 b and the back surfaces of the first semiconductor device120 a, so that the first semiconductor device 120 a is attached to thesecond semiconductor devices 120 b. In some embodiments, the interfacematerial 124 may include a thermal interface material (TIM) or a dieattach film (DAF), etc. In some embodiments, the interface material 124may include a thermally conductive material and may be a thermallyconductive gel, grease, or a thermally conductive adhesive. Theinterface material 124 allows for heat transfer between the back surfaceS2 of the semiconductor devices 120 a, 120 b and the upper surface ofthe concave portion 112, and maintains the positioning of thesemiconductor devices 120 a, 120 b fixed relative to the heatdissipation component 110. In an alternative embodiment, the interfacematerial 124 may include a gap filler or a graphite filled epoxy such asAdvanced Thermal Transfer Adhesive (ATTA). The disclosure is not limitedthereto.

With now reference to FIG. 4, an encapsulating material 130 is formed onthe carrier 20. In some embodiments, the encapsulating material 130fills the concave portion 112 and encapsulates the semiconductor devices120 a, 120 b. In some embodiments, the encapsulating material 130directly contacts the heat dissipation component 110, so as to reducethermal resistance between interfaces. The encapsulating material 130may be a single-layered encapsulating material, which may include amolding compound formed by a molding process. The material of theencapsulating material 130 may include epoxy or other suitable resins.For example, the encapsulating material 130 may be epoxy resincontaining chemical filler. In the present embodiments, the heatdissipation component 110 is a stamped metal sheet with the concaveportion 112 bended toward the carrier 20, and the extending portion 114extended away from the carrier 20. With such configuration, theencapsulating material 130 may also fill the gap between the uppersurface of the carrier 20 and the lower surface of the extending portion114.

FIG. 9 illustrates a schematic top view of a heat dissipation componentin accordance with some embodiments. Referring to both FIG. 4 and FIG.9, in some embodiments, the heat dissipation component 110 may furtherinclude a plurality of cutouts (or holes) 116 as shown in FIG. 9. Thecutouts 116 penetrate through the heat dissipation component 110, sothat the encapsulating material 130 may flow through the cutouts 116 toencapsulate the heat dissipation component 110. In other words, theencapsulating material 130 can fill the concave portion 112 and the gapbetween the carrier 20 and the extending portion 114 evenly through thecutouts 116 without having air trapped therein to decrease heatdissipation efficiency. In some embodiments, the cutouts 116 may bedisposed on a sidewall of the concave portion 112 or the extendingportion 114. The disclosure does not limit the arrangement and thenumber of the cutouts 116 on the heat dissipation component 110.

In some embodiments, the encapsulating material 130 reveals the topsurfaces of the conductive pillars 122 b, the top surfaces of theconductive bumps 122 a, and the top surface of the extending portion114. In detail, the upper surface of the encapsulating material 130 maybe substantially level (i.e. coplanar) with the top surfaces of theconductive pillars 122 b, the top surfaces of the conductive bumps 122a, and the top surface of the extending portion 114. In one of theimplementations, the encapsulating material 130 is formed over thesemiconductor devices 120 a, 120 b and may firstly cover the topsurfaces of the conductive pillars 122 b, the top surfaces of theconductive bumps 122 a, and the top surface of the extending portion114. Then, a thinning process may be performed on the upper surface ofthe encapsulating material 130. Accordingly, the encapsulating material130 is ground to reveal the top surfaces of the conductive pillars 122b, the top surfaces of the conductive bumps 122 a, and the top surfaceof the extending portion 114. In some embodiments, the thinning processmay be, for example, a mechanical grinding or CMP process wherebychemical etchants and abrasives are utilized to react and grind away theencapsulating material 130 and/or the tips of the conductive pillars 122b, the conductive bumps 122 a, and the extending portion 114. Theresulting structure is shown in FIG. 4. After the thinning process isperformed, the upper surface of the encapsulating material 130 may besubstantially level with the top surfaces of the conductive pillars 122b, the top surfaces of the conductive bumps 122 a, and the top surfaceof the extending portion 114 as shown in FIG. 4. However, while the CMPprocess described above is presented as one illustrative embodiment, itis not intended to be limiting to the embodiments. Any other suitableremoval process may alternatively be used to thin the encapsulatingmaterial 130. For example, a series of chemical etches may alternativelybe utilized. This process and any other suitable process mayalternatively be utilized, and all such processes are fully intended tobe included within the scope of the embodiments.

In some embodiment, the upper surface of the encapsulating material 130is ground and polished until the conductive pillars 122 b, theconductive bumps 122 a, and the extending portion 114 are revealed. Insome embodiments, the tips of the conductive pillars 122 b, theconductive bumps 122 a, and the extending portion 114 may also be groundto obtain a substantially planar surface. Accordingly, a ground surfaceof the encapsulating material 130 is substantially coplanar with the topsurfaces of the conductive pillars 122 b, the conductive bumps 122 a,and the extending portion 114.

Referring to FIG. 5, a redistribution structure 140 is formed over theencapsulating material 130 and the heat dissipation component 110. Theredistribution structure 140 is electrically connected to the conductivebumps 122 a of the first semiconductor device 120 a and the conductivepillars 122 b of the second semiconductor devices 120 b. Namely, thefirst semiconductor device 120 a and the second semiconductor devices120 b are electrically connected to one another through theredistribution structure 140. In other words, the first semiconductordevice 120 a and the second semiconductor devices 120 b are mounted onthe redistribution structure 140 through flip chip bonding technique. Insome embodiments, the heat dissipation component 110 is in heat transferrelationship with the redistribution structure 140. For example, theredistribution structure 140 may directly contact the extending portion114 of the heat dissipation component 110, so that the heat generated bythe semiconductor devices 120 a, 120 b can not only be dissipatedthrough the concave portion 112, but also be dissipated through athermal conducting path formed of the redistribution structure 140 andthe extending portion 114. In some embodiments, a plurality ofdielectric layers (e.g. dielectric layer 144) and a plurality ofredistribution circuit layers (e.g. redistribution circuit layer 142)may be stacked on top of one another alternately to form theredistribution structure 140 shown in FIG. 5. The redistributionstructure 140 at least includes a dielectric layer 144 and aredistribution circuit layer 142 (i.e. an upmost redistribution circuitlayer 142) electrically connected to the semiconductor devices 120 a,120 b and the conductive pillars 122 b. In some embodiments, the upmostredistribution circuit layer 142 of the redistribution structure 140 maydirectly contact the extending portion 114 of the heat dissipationcomponent 110 to facilitate heat dissipation efficiency.

With now reference to FIG. 6, a plurality of electrical connectors 150are disposed on the redistribution structure 140. In some embodiments,the redistribution structure 140 may further include an under bumpmetallurgy (UBM) layer for further electrical connection, and theelectrical connectors 150 may be mounted on the under bump metallurgylayer or directly disposed on the closest redistribution circuit layerof the redistribution structure 140. In some embodiments, at least oneintegrated passive device (IPD) may also be mounted on theredistribution structure 140. The electrical connectors 150 and theintegrated passive device are electrically connected to theredistribution structure 140. The formation of the electrical connectors150 may include placing solder balls on the redistribution structure140, and then reflowing the solder balls. In alternative embodiments,the formation of the electrical connectors 150 may include performing aplating process to form solder material on the redistribution structure140, and then reflowing the solder material. The electrical connectors150 may also include conductive pillars, or conductive pillars withsolder caps, which may also be formed through plating. The integratedpassive device may be fabricated using standard wafer fabricationtechnologies such as thin film and photolithography processing, and maybe mounted on the redistribution structure 140 through, for example,flip-chip bonding or wire bonding, etc.

With now reference to FIG. 6 and FIG. 7, the carrier 20 shown in FIG. 6may then be removed. In some embodiments, the carrier 20 is detachedfrom the encapsulating material 130 and the heat dissipation component110, by directly stripping or causing the de-bonding layer (if any) onthe carrier 20 to lose or reduce adhesion. The de-bonding layer is thenremoved along with the carrier 20. For example, the de-bonding layer maybe exposed to UV light, so that the de-bonding layer loses or reducesadhesion, and hence the carrier 20 and the de-bonding layer can beremoved from the encapsulating material 130 and the heat dissipationcomponent 110.

Throughout the description, the resultant structure in FIG. 6 (withoutthe carrier 20) including the heat dissipation component 110, thesemiconductor devices 120 a, 120 b, the encapsulating material 130, theredistribution structure 140 and the electrical connectors 150 isreferred to as an integrated circuit wafer 101, which is in a waferform. Accordingly after the carrier 20 is removed, the integratedcircuit wafer 101 is then flipped over and attached to a frame 30 asshown in FIG. 7. The frame 30 may include an adhesive tape and hold theintegrated circuit wafer 101 in place during the singulation process.Next, a bladed saw 40 may be used to cut through the integrated circuitwafer 101. In some embodiments, the bladed saw 40 may be a diamond saw.The bladed saw 40 cuts completely through the integrated circuit wafer101 to form a plurality of semiconductor packages 100 (one of thesemiconductor packages 100 is illustrated herein).

With reference now to FIG. 8, the semiconductor package 100 may bebonded and/or attached to another package component 200. In someembodiments, the electrical connectors 150 are used to bond thesemiconductor package 100 to the package component 200, which is, forexample, a printed circuit board (PCB) in some exemplary embodiments. Insome embodiments, no additional interposer and package substrate arebonded between the semiconductor package 100 and the package component200. In alternative embodiments, the semiconductor package 100 is bondedto an additional package and/or substrate (not shown), which is furtherbonded to a printed circuit board.

Referring to FIG. 8, when it comes to structural characteristics of thesemiconductor package 100 formed by the manufacturing process describedabove, the semiconductor package 100 includes the redistributionstructure 140, the semiconductor devices 120 a, 120 b, the heatdissipation component 110, the encapsulating material 130, and theelectrical connectors 150. The semiconductor devices 120 a, 120 b aredisposed on and electrically connected to the redistribution structure140. In some embodiments, the active surfaces of the semiconductordevices 120 a, 120 b face the redistribution structure 140 and have aplurality of the electrical contacts electrically connected toredistribution structure 140 through the conductive bumps 122 a and theconductive pillars 122 b.

In some embodiments, the heat dissipation component 110 is disposed onthe redistribution structure 140. In some embodiments, the heatdissipation component 110 includes the concave portion 112 and theextending portion 114. The concave portion 112 is configured forreceiving the semiconductor devices 120 a, 120 b. The extending portion114 is connected to the concave portion 112 and extended toward theredistribution structure 140. In some embodiments, the concave portion112 contacts the back surface of the semiconductor devices 120 a, 120 band the extending portion 114 contacts the redistribution structure 140.In one of the implementations, the extending portion 114 directlycontacts the upmost redistribution circuit layer 142 of theredistribution structure 140. In some embodiments, the semiconductordevice 120 a is disposed on the redistribution structure 140 and thesemiconductor device 120 b are stacked on the semiconductor device 120a, and the concave portion contacts the back surfaces of thesemiconductor device 120 b. In some embodiments, the semiconductordevices 120 b are stacked on the semiconductor device 120 a in aside-by-side manner. The encapsulating material 130 is disposed over theredistribution structure 140 and fills the concave portion 112 toencapsulate the semiconductor devices 120 a, 120 b.

FIG. 10 illustrates a schematic cross sectional view of a stage in amanufacturing process of a semiconductor package in accordance with someembodiments. FIG. 11 illustrates a schematic cross sectional view of asemiconductor package in accordance with some embodiments. It is notedthat the semiconductor package 100′ and the manufacturing processthereof shown in FIG. 10 and FIG. 11 contains many features same as orsimilar to the semiconductor package 100 and the manufacturing processthereof disclosed earlier with FIG. 1 to FIG. 8. For purpose of clarityand simplicity, detail description of same or similar features may beomitted, and the same or similar reference numbers denote the same orlike components. The main differences between the semiconductor package100′ shown in FIG. 10 and FIG. 11 and the semiconductor package 100shown in FIG. 8 are described as follows.

With now reference to FIG. 10, in some embodiments, the heat dissipationcomponent 110′ can be made by a silicon wafer. For example, the methodfor providing the heat dissipation component 110′ shown in FIG. 10 mayinclude providing a silicon wafer and forming at least one concaveportion 112′ in the silicon wafer. The location of the concave portion112′ on the heat dissipation component 110′ may be corresponding to thatof the concave portion 112 shown in FIG. 1. The concave portion 112′ maybe formed by an etching process or any other suitable process.Accordingly, the extending portion 114′ may be seen as the part of thesilicon wafer that does not undergo the etching process. In someembodiments, the heat dissipation component 110′ is made of silicon,which has great mechanical strength and favorable thermal conductivity.For example, the thermal conductivity of silicon is about 100 W·m⁻¹·K⁻¹to about 130 W·m⁻¹·K⁻¹. Therefore, the heat dissipation component 110′made of silicon can provide the semiconductor package 100′ with greatrigidity and mechanical strength and favorable thermal conductivity.

Then, similar manufacturing processes shown in FIG. 2 to FIG. 8 can besequentially applied to the structure shown in FIG. 10 to form thesemiconductor package 100′ shown in FIG. 11. In some embodiments, theencapsulating material 130 may merely fill the concave portion 112′ ofthe heat dissipation component 110′ to encapsulate the semiconductordevices 120 a, 120 b, so there is no need to arrange cutouts (e.g. thecutouts 116 shown in FIG. 9) on the heat dissipation component 110′ forthe encapsulating material 130 to flow therethrough. With suchconfiguration, the concave portion 112′ may contact the back surfaces ofthe semiconductor devices 120 a, 120 b (through the interface material124), and the extending portion 114′ may be in physical contacts withthe redistribution structure 140 (e.g. the upmost redistribution circuitlayer 142). Thereby, the heat generated by the semiconductor devices 120a, 120 b can not only be dissipated through the concave portion 112, butalso be dissipated through the thermal conducting path formed of theredistribution structure 140 and the extending portion 114′.

FIG. 12 to FIG. 16 illustrate schematic cross sectional views of variousstages in a manufacturing process of a semiconductor package inaccordance with some embodiments. It is noted that the semiconductorpackage 100″ and the manufacturing process thereof shown in FIG. 12 toFIG. 16 contains many features same as or similar to the semiconductorpackage 100 and the manufacturing process thereof disclosed earlier withFIG. 1 to FIG. 8. For purpose of clarity and simplicity, detaildescription of same or similar features may be omitted, and the same orsimilar reference numbers denote the same or like components. The maindifferences between the manufacturing process of the semiconductorpackage 100″ shown in FIG. 12 to FIG. 16 and the manufacturing processof the semiconductor package 100 shown in FIG. 1 to FIG. 8 are describedas follows.

In some embodiments, a semiconductor package 100″ having the heatdissipation component 110 may also be formed by a RDL first process. Forexample, the manufacturing process of the semiconductor package 100″ mayinclude the following process. With now reference to FIG. 12, aredistribution structure 140′ is formed on a carrier 20. In someembodiments, a de-bonding layer 21 may be disposed on the carrier 20before the redistribution structure 140′ is formed. The carrier 20 maybe a glass carrier, a ceramic carrier, or the like, and the carrier 20may have a round top-view shape and may have a size of a silicon wafer.The de-bonding layer 21 may be formed of a polymer-based material, whichmay be removed along with carrier 20 from the overlying structures thatwill be formed in subsequent steps. In an embodiment, the de-bondinglayer 21 is formed of an epoxy-based thermal-release material. In otherembodiments, release layer may be formed of a ultra-violet (UV) glue, aheat curable adhesive, an optical clear adhesive or a light-to-heatconversion (LTHC) adhesive, or the like. The de-bonding layer 21 may bedispensed as a liquid and cured. In alternative embodiments, thede-bonding layer 21 is a laminate film and is laminated onto carrier 20.The top surface of the de-bonding layer 21 is leveled and has a highdegree of co-planarity.

Then, a plurality of dielectric layers (e.g. dielectric layer 144′) anda plurality of redistribution circuit layers (e.g. redistributioncircuit layer 142′) may be stacked on top of one another alternately toform the redistribution structure 140′ shown in FIG. 12. The materialfor dielectric layers may be selected from the same candidate materialsas for dielectric layers of the redistribution structure 140. Theformation of redistribution circuit layers may be the same as theformation of the redistribution circuit layers of the redistributionstructure 140.

With now reference to FIG. 13, at least one semiconductor device ismounted on the redistribution structure 140′. In some embodiments, aplurality of semiconductor devices 120 a, 120 b are illustrated herein,but the disclosure is not intended to limit the number of thesemiconductor device mounted on the redistribution structure 140′. Forexample, the semiconductor device to be mounted on the redistributionstructure 140′ may include a first semiconductor device 120 a and atleast one second semiconductor device 120 b (two second semiconductordevices 120 b are illustrated herein) as shown in FIG. 13. In someembodiments, the first semiconductor device 120 a is firstly mounted onthe redistribution structure 140′ through a plurality of conductivebumps 122 a disposed thereon. Then, the second semiconductor devices 120b are stacked on the first semiconductor device 120 a in, for example, aside-by-side manner. In some embodiments, a plurality of conductivepillars 122 b are disposed on the active surfaces of the secondsemiconductor devices 120 b. In the present embodiment, the activesurfaces S1 of the semiconductor devices 120 a, 120 b face theredistribution structure 140′, such that the semiconductor devices 120a, 120 b are mounted on the redistribution structure 140′ through theconductive bumps 122 a and the conductive pillars 122 b.

In some embodiments, the semiconductor devices 120 a, 120 b are mountedon the redistribution structure 140′ through, for example, flip-chipbonding process. In accordance with some embodiments of the presentdisclosure, the flip-chip bonding includes solder bonding, whereinsolder material 125 are used. In some embodiments, the conductive bumps122 a and the conductive pillars 122 b are bonded to the upmostredistribution circuit layer 142′ of the redistribution structure 140′through the solder material 125. In the reflow of the solder material125 to bond the semiconductor devices 120 a, 120 b to the redistributionstructure 140′, the semiconductor devices 120 a, 120 b are self-alignedto their intended positions due to the pulling force of the moltensolder material 125.

With now reference to FIG. 14, a heat dissipation component 110 isdisposed on the redistribution structure 140′. In some embodiments, theheat dissipation component 110 can be the same as or at least similar tothe heat dissipation component 110 shown in FIG. 8 or the heatdissipation component 110′ shown in FIG. 11. That is to say, in thepresent embodiment, the heat dissipation component 110 can be made of astamped sheet metal, a silicon wafer with concave portion, or the like.Accordingly, the heat dissipation component 110 includes a concaveportion 112 for receiving and contacting the semiconductor devices 120a, 120 b, and an extending portion 114 extended toward theredistribution structure 140′. In some embodiments, the heat dissipationcomponent 110 is in heat transfer relationship with the semiconductordevices 120 a, 120 b, and may be in contact with the semiconductordevices 120 a, 120 b through an interface material 124. Namely, theinterface material 124 may be applied between the concave portion 112 ofthe heat dissipation component 110 and the back surfaces of thesemiconductor devices 120 a, 120 b. In addition, an interface material117 may be applied between the redistribution structure 140′ and theextending portion 114 of the heat dissipation component 110 to bond theheat dissipation component 110 onto the redistribution structure 140′.

In some embodiments, the interface materials 124, 117 may include athermal interface material (TIM) or a die attach film (DAF), etc. Insome embodiments, the interface materials 124, 117 may include athermally conductive material and may be a thermally conductive gel,grease, or a thermally conductive adhesive. The interface materials 124,117 allow for heat transfer between the semiconductor devices 120 a, 120b, and the redistribution structure 140′, and maintains the relativepositioning of the semiconductor devices 120 a, 120 b, and theredistribution structure 140′. In an alternative embodiment, theinterface materials 124, 117 may include a gap filler or a graphitefilled epoxy such as Advanced Thermal Transfer Adhesive (ATTA). Thedisclosure does not limit the formation or the type of the interfacematerials 124, 117. In some embodiments, the interface materials 124,117 may be different. The materials for the interface materials 124 andthe materials for the interface materials 117 may be selected from thesame candidate materials as described above, but may be different fromeach other.

With now reference to FIG. 15, an encapsulating material 130 is formedover the redistribution structure 140′, and the encapsulating material130 fills the concave portion 112 of the heat dissipation component 110and encapsulates the semiconductor devices 120 a, 120 b. In the presentembodiments, the heat dissipation component 110 is a stamped metal sheetwith the concave portion 112 and the extending portion 114 extendedtoward the redistribution structure 140′. With such configuration, theencapsulating material 130 may also encapsulates the upper surface ofthe extending portion 114. In other embodiments where the heatdissipation component made of a silicon wafer having concave portion,the encapsulating material 130 may merely fill the concave portion 112to encapsulate the semiconductor devices 120 a, 120 b.

With now reference to FIG. 15 and FIG. 16, the carrier 20 shown in FIG.15 may then be removed. In some embodiments, the carrier 20 is detachedfrom the redistribution structure 140′, by directly stripping or causingthe de-bonding layer 21 on the carrier 20 to lose or reduce adhesion.The de-bonding layer 21 is then removed along with the carrier 20. Forexample, the de-bonding layer 21 may be exposed to UV light, so that thede-bonding layer 21 loses or reduces adhesion, and hence the carrier 20and the de-bonding layer 21 can be removed from the redistributionstructure 140′ to reveal a lower surface of the redistribution structure140′.

Then, a plurality of electrical connectors 150 may be disposed on thelower surface of the redistribution structure 140′ as shown in FIG. 16.In some embodiments, after the carrier 20 is removed, the resultantstructure (without the carrier 20) shown in FIG. 15 may then be flippedover and attached to another carrier for mounting the electricalconnectors 150 on the redistribution structure 140′. In someembodiments, the redistribution structure 140′ may further include anunder bump metallurgy (UBM) layer for further electrical connection. Theelectrical connectors 150 may be mounted on the under bump metallurgylayer or directly disposed on the closest redistribution circuit layerof the redistribution structure 140. In some embodiments, at least oneintegrated passive device (not shown) may also be mounted on the lowersurface of the redistribution structure 140′. The electrical connectors150 may include solder balls, solder materials, conductive pillars, orconductive pillars with solder caps, etc. The integrated passive devicemay be fabricated using standard wafer fabrication technologies such asthin film and photolithography processing, and may be mounted on theredistribution structure 140′ through, for example, flip-chip bonding orwire bonding, etc.

In light of the foregoing, the disclosure provides the semiconductorpackage and the manufacturing method thereof, wherein the heatdissipation component includes a concave portion for receiving andcontacting at least one semiconductor device and an extending portioncontacting the redistribution structure, and the encapsulating materialencapsulates the semiconductor device and the heat dissipationcomponent. With such configuration, the heat generated by thesemiconductor device can be dissipated through the concave portion ofthe heat dissipation component. Moreover, the heat can also bedissipated through the thermal conducting path formed of theredistribution structure and the extending portion of the heatdissipation component. Namely, the heat dissipation component may be incontact with the heat source (e.g. the semiconductor device, and theredistribution structure), and the encapsulating material contacts theheat dissipation component without any interface material, so thermalresistance between interfaces is significantly reduced, and the heatfrom the heat sources can be dissipated much more efficiently.

In addition, the encapsulating material fill the concave portion of theheat dissipation component and encapsulates the semiconductor device, sothere is no air (thermal conductivity of air is about zero) trapped inthe semiconductor package to decrease heat dissipation efficiency.Therefore, the disclosure improves the thermal performance and heatdissipation efficiency of the semiconductor package, and also reducesthermal resistance between interfaces.

Based on the above discussions, it can be seen that the presentdisclosure offers various advantages. It is understood, however, thatnot all advantages are necessarily discussed herein, and otherembodiments may offer different advantages, and that no particularadvantage is required for all embodiments.

In accordance with some embodiments of the disclosure, a semiconductorpackage includes a redistribution structure, at least one semiconductordevice, a heat dissipation component, and an encapsulating material. Theat least one semiconductor device is disposed on and electricallyconnected to the redistribution structure. The heat dissipationcomponent is disposed on the redistribution structure and includes aconcave portion for receiving the at least one semiconductor device andan extending portion connected to the concave portion and contacting theredistribution structure, wherein the concave portion connects the atleast one semiconductor device. The encapsulating material is disposedover the redistribution structure, wherein the encapsulating materialfills the concave portion and encapsulates the at least onesemiconductor device.

In accordance with some embodiments of the disclosure, a manufacturingmethod of a semiconductor package includes the following steps. A heatdissipation component is provided on a carrier, wherein the heatdissipation component includes a concave portion. At least onesemiconductor device is disposed in the concave portion. Anencapsulating material is formed on the carrier, wherein theencapsulating material fills the concave portion and encapsulates the atleast one semiconductor device. A redistribution structure is formedover the encapsulating material and the heat dissipation component,wherein the redistribution structure contacts the heat dissipationcomponent and is electrically connected to the at least onesemiconductor device. The carrier is removed.

In accordance with some embodiments of the disclosure, a manufacturingmethod of a semiconductor package includes the following steps. Aredistribution structure is formed on a carrier. At least onesemiconductor device is mounted on the redistribution structure. A heatdissipation component is disposed on the redistribution structure,wherein the heat dissipation component includes a concave portion forreceiving and connecting the at least one semiconductor device. Anencapsulating material is formed over the redistribution structure,wherein the encapsulating material fills the concave portion andencapsulates the at least one semiconductor device. The carrier isremoved.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor package, comprising: a heatdissipation component comprising a concave portion; at least onesemiconductor device disposed in the concave portion of the heatdissipation component; an encapsulating material filling the concaveportion and encapsulating the at least one semiconductor device; and aredistribution structure disposed on the heat dissipation component, theat least one semiconductor device, and the encapsulating material,wherein the redistribution structure is electrically connected to thesemiconductor device.
 2. The semiconductor package as claimed in claim1, wherein the heat dissipation component further comprising anextending portion connected to the concave portion, wherein theextending portion of the heat dissipation component is thermally coupledto the redistribution structure.
 3. The semiconductor package as claimedin claim 1, wherein the extending portion of the heat dissipationcomponent is in contact with the redistribution structure.
 4. Thesemiconductor package as claimed in claim 3, wherein the extendingportion of the heat dissipation component comprises a surface in contactwith the redistribution structure, and the surface of the extendingportion is substantially level with a surface of the encapsulatingmaterial.
 5. The semiconductor package as claimed in claim 3, whereinthe extending portion of the heat dissipation component is in directlycontact with an upmost redistribution circuit layer of theredistribution structure.
 6. The semiconductor package as claimed inclaim 1, wherein the extending portion of the heat dissipation componentis thermally coupled to the redistribution structure through aninterface material encapsulated by the encapsulating material.
 7. Thesemiconductor package as claimed in claim 6, wherein the interfacematerial comprises a surface in contact with the redistributionstructure, and the surface of the interface material is substantiallylevel with a surface of the encapsulating material.
 8. The semiconductorpackage as claimed in claim 1, wherein the concave portion of the heatdissipation component is thermally coupled to the at least onesemiconductor device through an interface material.
 9. The semiconductorpackage as claimed in claim 1, wherein the heat dissipation componentcomprises cutouts penetrating the heat dissipation component.
 10. Thesemiconductor package as claimed in claim 1 further comprisingelectrical connectors, wherein the electrical connectors areelectrically connected to the at least one semiconductor device throughthe redistribution structure.
 11. A method, comprising: disposing atleast one semiconductor device in a concave portion of a heatdissipation component; encapsulating the at least one semiconductordevice and filling the concave portion of the heat dissipation componentwith an encapsulating material; and forming a redistribution structureover the encapsulating material and the heat dissipation component,wherein the redistribution structure is thermally coupled to the heatdissipation component and is electrically connected to the at least onesemiconductor device.
 12. The method as claimed in claim 11, wherein theat least one semiconductor device is disposed in the concave portion ofthe heat dissipation component through an interface material between theconcave portion and a back surface of the at least one semiconductordevice.
 13. The method as claimed in claim 11, wherein the at least onesemiconductor device comprises a first semiconductor device and at leastone second semiconductor device, and disposing the at least onesemiconductor device in the concave portion of the heat dissipationcomponent comprises: disposing the at least one second semiconductordevice in the concave portion, wherein the at least one secondsemiconductor device comprises an active surface and conductive pillarsdisposed on the active surface; and stacking the first semiconductordevice on the active surface of the at least one second semiconductordevice.
 14. The method as claimed in claim 13, wherein the at least onesecond semiconductor device comprises second semiconductor devicesarranged in a side-by-side manner, and the first semiconductor device isstacked on the second semiconductor devices.
 15. The method as claimedin claim 13, wherein the first semiconductor device is stacked on the atleast one second semiconductor device through an interface materialbetween the at least one second semiconductor device and a back surfaceof the first semiconductor device.
 16. A method, comprising: disposingat least one semiconductor device on a redistribution structure;covering the at least one semiconductor device and the redistributionstructure with a heat dissipation component, the heat dissipationcomponent comprising a concave portion for receiving the at least onesemiconductor device; and encapsulating the at least one semiconductordevice and filling concave portion with an encapsulating material. 17.The method as claimed in claim 16, wherein the heat dissipationcomponent further comprises an extending portion connected to theconcave portion, the extending portion of the heat dissipation componentis thermally coupled to the redistribution structure through a firstinterface material, and the concave portion of the heat dissipationcomponent is thermally coupled to a back surface of the at least onesemiconductor device through a second interface material.
 18. The methodas claimed in claim 16, wherein the at least one semiconductor devicecomprises a first semiconductor device and at least one secondsemiconductor device, and disposing the at least one semiconductordevice on the redistribution structure comprises: mounting the firstsemiconductor device on the redistribution structure through conductivebumps; and stacking the at least one second semiconductor device on thefirst semiconductor device, wherein the at least one secondsemiconductor device comprises an active surface facing theredistribution structure and conductive pillars disposed on the activesurface, and the conductive pillars are configured to be disposed on theredistribution structure.
 19. The method as claimed in claim 18, whereinthe at least one second semiconductor device comprises secondsemiconductor devices arranged in a side-by-side manner.
 20. The methodas claimed in claim 16, wherein the encapsulating material is formed bya molding process followed by a polishing process.